New NBTI lifetime prediction method for ultra thin siO2 films

K. Watanabe, R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

An accurate NBTI evaluation method is developed and the degradation mechanism caused by the NBT stress is also discussed. The impact of the carrier distribution and energy in the inversion layer to the NBTI degradation is clarified using the device simulator and theoretical calculation. The device simulation and theoretical calculation results depict that an excess stress such as a high voltage and temperature excites some holes to high energy levels. A presence of those high energy holes (warm holes) makes the accurate NBTI lifetime prediction difficult. On the other hand, the developed model can easily evaluate the NBTI degradation because it does not excite any warm hole. Finally, the NBTI lifetime prediction using the developed model is demonstrated.

Original languageEnglish
Title of host publicationPhysics and Chemistry of SiO2 and the Si-SiO2 Interface-5
PublisherElectrochemical Society Inc.
Pages147-160
Number of pages14
Edition1
ISBN (Electronic)9781607685395
Publication statusPublished - 2006
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 20

Publication series

NameECS Transactions
Number1
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period05/10/1605/10/20

ASJC Scopus subject areas

  • Engineering(all)

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