New Monte Carlo simulation for polycrystalline silicon thin-film transistor

Tamio Shimatani, Mitsumasa Koyanagi

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The conduction mechanism in poly-Si TFT is investigated in detail using a new device simulator based on Monte Carlo method. In this simulator, the influences of grain boundaries on the electrical conduction are represented by the grain boundary traps. The potential barriers are formed at the grain boundaries by the trapped electrons. The conduction electrons are repelled by these potential barriers and the current flow decreases. It is found from the simulation results that these potential barriers are reduced more significantly near the poly-Si-gate oxide interface and consequently the current flow is confined near the interface when a high gate voltage is applied. It also turns out that holes generated by the impact ionization significantly influence the channel electron conduction through reducing the barrier height at the grain boundary. This effect is the origin of the avalanche induced short channel effect in poly-Si TFT.

Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 1995 Dec 101995 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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