New model of nucleation and growth in a thin layer between two interfaces

Takashi Tagami, Shun Ichiro Tanaka

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In a-Si/SiO x multilayers, nucleation is random and growth stops at the interfaces. An expression for the halt in growth is derived from the free energy change of a crystallite between two interfaces. This expression supports that the halt in growth occurs in thin layers. The halt in growth causes a serious problem in that the crystalline fraction is overestimated in the Kolmogorov-Johnson-Mehl-Avrami model because phantom crystallites grow partially outside the crystalline region. The present model successfully corrects the crystalline fraction by introducing a generation probability which accounts for the effective size of the phantoms.

Original languageEnglish
Pages (from-to)147-150
Number of pages4
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • Crystalline fraction
  • Free energy
  • Nanocrystalline Si
  • Nucleation and growth
  • a-Si/SiO interface

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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