New MBE growth method for InSb quantum well boxes

Nobuyuki Koguchi, Satoshi Takahashi, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

323 Citations (Scopus)

Abstract

We propose a new MBE growth method for InSb microcrystals on CdTe which has a nearly equal lattice constant to InSb. The average size of the InSb microcrystals was about 150 nm × 200 nm × 70 nm. This method is based on the Sb incorporation into In droplets and thought to be useful for fabricating quantum well boxes.

Original languageEnglish
Pages (from-to)688-692
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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