New magnetic flash memory with FePt magnetic floating gate

Cheng Kuan Yin, Ji Chel Bea, Youn Gi Hong, Takafumi Fukushima, Masanobu Miyao, Kenji Natori, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.

Original languageEnglish
Pages (from-to)3217-3221
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2006 Apr 25


  • FePt
  • Floating gate
  • Nonvolatile memory
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'New magnetic flash memory with FePt magnetic floating gate'. Together they form a unique fingerprint.

Cite this