Abstract
A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.
Original language | English |
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Pages (from-to) | 3217-3221 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2006 Apr 25 |
Keywords
- FePt
- Floating gate
- Nonvolatile memory
- Rapid thermal annealing
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)