New magnetic flash memory with FePt magnetic floating gate

Cheng Kuan Yin; Ji Chel Bea; Youn Gi Hong; Takafumi Fukushima; Masanobu Miyao; Kenji Natori; Mitsumasa Koyanagi

doi:10.1143/JJAP.45.3217

New magnetic flash memory with FePt magnetic floating gate

Cheng Kuan Yin, Ji Chel Bea, Youn Gi Hong, Takafumi Fukushima, Masanobu Miyao, Kenji Natori, Mitsumasa Koyanagi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.

Original language	English
Pages (from-to)	3217-3221
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3217
Publication status	Published - 2006 Apr 25

Keywords

FePt
Floating gate
Nonvolatile memory
Rapid thermal annealing

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.3217

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New magnetic flash memory with FePt magnetic floating gate. / Yin, Cheng Kuan; Bea, Ji Chel; Hong, Youn Gi; Fukushima, Takafumi; Miyao, Masanobu; Natori, Kenji; Koyanagi, Mitsumasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3217-3221.

Research output: Contribution to journal › Article › peer-review

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abstract = "A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.",

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AU - Natori, Kenji

AU - Koyanagi, Mitsumasa

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AB - A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.

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New magnetic flash memory with FePt magnetic floating gate

Abstract

Keywords

ASJC Scopus subject areas

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