Abstract
Polycrystalline diamond films have been patterned on a polished Si substrate by means of selective seeding via hot-filament chemical vapour deposition. In addition to the process of selective seeding, the CH4/H2 concentration and the sizes of the patterns have effects on the selectivity. The mechanism of selective growth of diamond is also discussed in this paper.
Original language | English |
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Pages (from-to) | 10973-10977 |
Number of pages | 5 |
Journal | Journal of Physics Condensed Matter |
Volume | 14 |
Issue number | 44 SPEC ISS. |
DOIs | |
Publication status | Published - 2002 Nov 11 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics