Polycrystalline diamond films have been patterned on a polished Si substrate by means of selective seeding via hot-filament chemical vapour deposition. In addition to the process of selective seeding, the CH4/H2 concentration and the sizes of the patterns have effects on the selectivity. The mechanism of selective growth of diamond is also discussed in this paper.
|Number of pages||5|
|Journal||Journal of Physics Condensed Matter|
|Issue number||44 SPEC ISS.|
|Publication status||Published - 2002 Nov 11|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics