New gas chemistries for high-performance and chargeless dielectric etching

Seiji Samukawa, Tomonori Mukai, Ko Noguchi

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMaterials Science in Semiconductor Processing
Issue number3
Publication statusPublished - 1999 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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