New gas chemistries for high-performance and chargeless dielectric etching

Seiji Samukawa; Tomonori Mukai; Ko Noguchi

doi:10.1016/S1369-8001(99)00017-7

New gas chemistries for high-performance and chargeless dielectric etching

Seiji Samukawa, Tomonori Mukai, Ko Noguchi

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

This paper proposes a new radical control (selective radical generation) method for high-performance SiO₂ patterning using non-perfluorocarbon gases (CF₃I and C₂F₄) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF₂ and CF₃ radicals in CF₃I/C₂F₄ gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO₂ contact hole formation. The gas chemistries could also suppress charge-up damage during SiO₂ contact hole formation because a low-electron temperature is maintained while realizing high CF₂ radical flux and ion flux in the plasma.

Original language	English
Pages (from-to)	203-208
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	2
Issue number	3
DOIs	https://doi.org/10.1016/S1369-8001(99)00017-7
Publication status	Published - 1999 Oct
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-8001(99)00017-7

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title = "New gas chemistries for high-performance and chargeless dielectric etching",

abstract = "This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.",

author = "Seiji Samukawa and Tomonori Mukai and Ko Noguchi",

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AU - Samukawa, Seiji

AU - Mukai, Tomonori

AU - Noguchi, Ko

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N2 - This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.

AB - This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.

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ER -

New gas chemistries for high-performance and chargeless dielectric etching

Abstract

ASJC Scopus subject areas

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