New gas chemistries for high-performance and chargeless dielectric etching

Seiji Samukawa; Tomonori Mukai; Ko Noguchi

doi:10.1016/S1369-8001(99)00017-7

New gas chemistries for high-performance and chargeless dielectric etching

Seiji Samukawa, Tomonori Mukai, Ko Noguchi

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This paper proposes a new radical control (selective radical generation) method for high-performance SiO₂ patterning using non-perfluorocarbon gases (CF₃I and C₂F₄) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF₂ and CF₃ radicals in CF₃I/C₂F₄ gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO₂ contact hole formation. The gas chemistries could also suppress charge-up damage during SiO₂ contact hole formation because a low-electron temperature is maintained while realizing high CF₂ radical flux and ion flux in the plasma.

Original language	English
Pages (from-to)	203-208
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	2
Issue number	3
DOIs	https://doi.org/10.1016/S1369-8001(99)00017-7
Publication status	Published - 1999 Oct
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S1369-8001(99)00017-7

Cite this

@article{e7ab771534f04864bd65d98ab12c8dca,

title = "New gas chemistries for high-performance and chargeless dielectric etching",

abstract = "This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.",

author = "Seiji Samukawa and Tomonori Mukai and Ko Noguchi",

year = "1999",

month = oct,

doi = "10.1016/S1369-8001(99)00017-7",

language = "English",

volume = "2",

pages = "203--208",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - New gas chemistries for high-performance and chargeless dielectric etching

AU - Samukawa, Seiji

AU - Mukai, Tomonori

AU - Noguchi, Ko

PY - 1999/10

Y1 - 1999/10

N2 - This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.

AB - This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.

UR - http://www.scopus.com/inward/record.url?scp=0005416291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005416291&partnerID=8YFLogxK

U2 - 10.1016/S1369-8001(99)00017-7

DO - 10.1016/S1369-8001(99)00017-7

M3 - Article

AN - SCOPUS:0005416291

VL - 2

SP - 203

EP - 208

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 3

ER -

New gas chemistries for high-performance and chargeless dielectric etching

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this