Abstract
This paper proposes a new radical control (selective radical generation) method for high-performance SiO2 patterning using non-perfluorocarbon gases (CF3I and C2F4) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF2 and CF3 radicals in CF3I/C2F4 gas mixture plasma. Thus it could accomplish both a high etching rate and high etching selectivity during SiO2 contact hole formation. The gas chemistries could also suppress charge-up damage during SiO2 contact hole formation because a low-electron temperature is maintained while realizing high CF2 radical flux and ion flux in the plasma.
Original language | English |
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Pages (from-to) | 203-208 |
Number of pages | 6 |
Journal | Materials Science in Semiconductor Processing |
Volume | 2 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1999 Oct |
Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering