@inproceedings{432c14c42479470bb1e368aa0da656b9,
title = "New findings in nano-scale interface physics and their relations to nano-CMOS technologies",
abstract = "We show the new findings in nano-scale interface physics and atomistic beheviors of defects in gate dielectric materials. In this paper, we first discuss the relation between defect behaviors and transistor characteristics. Next, we introduce our newly prosed mechanism of Fermi level pinning governed by the interface reaction. Further, we show that conventional charge neutrality level concept does not applicable to metal/high-k dielectric interfaces, and we propose a generalized charge neutrality level concept that includes both nano-scale interface structures and metal band structures. Finally, we discuss the atomistic investigation on the characteristics of conventional Si/SiO2 nemo interfaces",
keywords = "Defect, Effective work functions, Fermi level pinnig, High-k dielectrics, Inteface, Reliability, Si, SiO, Theory",
author = "K. Shiraishi and Y. Akasaka and K. Torii and T. Nakayama and S. Miyazaki and T. Nakaoka and H. Watanabe and K. Ohmori and P. Ahmet and T. Chikyow and Y. Nara and K. Yamada",
year = "2006",
doi = "10.1109/IWNC.2006.4570992",
language = "English",
isbn = "142440603X",
series = "2006 International Workshop on Nano CMOS - Proceedings, IWNC",
pages = "180--208",
booktitle = "1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006",
note = "1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 ; Conference date: 30-01-2006 Through 01-02-2006",
}