New fabrication technology of fin field effect transistors using neutral-beam etching

Kazuhiko Endo, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Hiromi Yamauchi, Yuki Ishikawa, Eiichi Suzuki

Research output: Contribution to journalReview articlepeer-review

4 Citations (Scopus)

Abstract

Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.

Original languageEnglish
Pages (from-to)5513-5516
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number6 B
DOIs
Publication statusPublished - 2006 Jun 20

Keywords

  • Damage
  • Double gate
  • Neutral-beam
  • Ultrathin channel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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