New electrically thinned intrinsic-channel SOI MOSFET with 0.01 μm channel length

Tamio Shimatani, Sergey Pidin, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In an ultrasmall device with a channel length of 0.01 μm, only one impurity atom on the average exists in the channel region even though the impurity concentration is higher than 5.0 × 1018 cm-3. Therefore, the device characteristics significantly change from device to device within a wafer, or even within a chip, due to the statistical variation of the impurity concentration. We investigated the influences of isolated atoms in the channel region on the device characteristics based on a Monte Carlo simulation and propose a new 0.01 μm silicon-on-insulator metal oxide semiconductor field-effect transistor (SOI MOSFET) with undoped channel to suppress the influences of statistical variation and the short channel effect.

Original languageEnglish
Pages (from-to)1659-1662
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number3 SUPPL. B
Publication statusPublished - 1997 Mar 1

Keywords

  • Intrinsic channel
  • MOSFET
  • Monte Carlo simulation
  • SOI
  • Short channel effect
  • Statistical variation of impurity atoms

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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