A new drain conductance method to evaluate the kink effects in SOI MOSFET has been proposed. Three kinds of kink currents were observed by using this new method when the temperature is reduced. These kink current are caused by the parasitic lateral bipolar action, the forward biasing effect in the source junction and the drain junction avalanche breakdown. The kink effect is mainly dominated by the parasitic lateral bipolar action at the higher temperature and by the source junction forward biasing effect at the lower temperature in the temperature range from 300K to 20K. These kink currents were described very well by a newly proposed analytical model.
|Number of pages||3|
|Publication status||Published - 1992 Dec 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas