New drain conductance method to evaluate impact ionization phenomenon in SOI MOSFET

Hiroyuki Kurino, Takeshi Hashimoto, Kiyomi Hata, Hiroyuki Kiba, Yasuo Yamaguchi, Tadashi Nishimura, Mitumasa Koyanagi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A new drain conductance method to evaluate the kink effects in SOI MOSFET has been proposed. Three kinds of kink currents were observed by using this new method when the temperature is reduced. These kink current are caused by the parasitic lateral bipolar action, the forward biasing effect in the source junction and the drain junction avalanche breakdown. The kink effect is mainly dominated by the parasitic lateral bipolar action at the higher temperature and by the source junction forward biasing effect at the lower temperature in the temperature range from 300K to 20K. These kink currents were described very well by a newly proposed analytical model.

Original languageEnglish
Pages61-63
Number of pages3
Publication statusPublished - 1992 Dec 1
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Kurino, H., Hashimoto, T., Hata, K., Kiba, H., Yamaguchi, Y., Nishimura, T., & Koyanagi, M. (1992). New drain conductance method to evaluate impact ionization phenomenon in SOI MOSFET. 61-63. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .