TY - JOUR
T1 - New direct spectroscopic method for determination of bias-dependent electronic states
T2 - Hard X-ray photoelectron spectroscopy under device operation
AU - Yamashita, Yoshiyuki
AU - Yoshikawa, Hideki
AU - Chikyo, Toyohiro
AU - Kobayashi, Keisuke
PY - 2013/10
Y1 - 2013/10
N2 - A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2/SiO2/Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact.
AB - A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2/SiO2/Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact.
UR - http://www.scopus.com/inward/record.url?scp=84887216378&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887216378&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.108005
DO - 10.7567/JJAP.52.108005
M3 - Article
AN - SCOPUS:84887216378
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 PART1
M1 - 108005
ER -