Abstract
A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2/SiO2/Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact.
| Original language | English |
|---|---|
| Article number | 108005 |
| Journal | Japanese journal of applied physics |
| Volume | 52 |
| Issue number | 10 PART1 |
| DOIs | |
| Publication status | Published - 2013 Oct 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Yamashita, Y., Yoshikawa, H., Chikyo, T., & Kobayashi, K. (2013). New direct spectroscopic method for determination of bias-dependent electronic states: Hard X-ray photoelectron spectroscopy under device operation. Japanese journal of applied physics, 52(10 PART1), [108005]. https://doi.org/10.7567/JJAP.52.108005