New direct spectroscopic method for determination of bias-dependent electronic states: Hard X-ray photoelectron spectroscopy under device operation

Yoshiyuki Yamashita, Hideki Yoshikawa, Toyohiro Chikyo, Keisuke Kobayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2/SiO2/Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact.

Original languageEnglish
Article number108005
JournalJapanese journal of applied physics
Volume52
Issue number10 PART1
DOIs
Publication statusPublished - 2013 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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