New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Moon Sik Seo, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We intensively investigated the interference effect by direct or indirect coupling path with neighboring cells of the 3-Dimensional (3-D) vertical Floating Gate (FG) type NAND cell arrays. Above all, we proposed the optimum 3-D vertical FG type NAND cell array structure to fully suppress the interference effects.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages152-153
Number of pages2
DOIs
Publication statusPublished - 2011 Jul 11
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China
Duration: 2011 Apr 252011 Apr 27

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan, Province of China
CityHsinchu
Period11/4/2511/4/27

Keywords

  • 3-D vertical cell
  • FG type NAND
  • Interference effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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