NEW DEGRADATION PHENOMENA INDUCED BY ION-IMPLANTATION CHANNELING IN SHORT CHANNEL TRANSISTORS.

Akihiro Nitayama, Hiroshi Takato, Riichiro Shirota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages483-486
Number of pages4
ISBN (Print)493081314X, 9784930813145
DOIs
Publication statusPublished - 1986

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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