New Contact Metallization Scheme for FinFET and beyond

Junichi Koike, Maryamsadat Hosseini, Daisuke Ando, Yuji Sutou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new metallization scheme of Co/CoTix alloy is proposed to replace conventional W contact plug and TiN/Ti barrier so as to alleviate increasing parasitic resistance of MOL with device scaling in sub-10 nm node. Annealing of the CoTix alloy layer led to the formation of epitaxial Co silicide and TiOx at the Co/Si interface. With this interface structure, a low contact resistivity of 10-9 Ω cm2 was obtained on highly doped n-Si.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages169-171
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

Keywords

  • Cobalt
  • MOL
  • alloy
  • contact

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Koike, J., Hosseini, M., Ando, D., & Sutou, Y. (2018). New Contact Metallization Scheme for FinFET and beyond. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 169-171). [8421448] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421448