New concept of TSV formation methodology using Directed Self-Assembly (DSA)

Takafumi Fukushima, Mariappan Murugesan, Shin Ohsaki, Hiroyuki Hashimoto, Jichoel Bea, Kanuku Ri, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new TSV formation methodology based on advanced Directed Self-Assembly (DSA) with nanocomposites consisting of nano metal particles and block-co-polymers is proposed in this paper. Cylindrical nano-ordered structures are formed in Si deep holes through phase separation of polystyrene-block-poly methyl methacrylate polymers (PS-b-PMMA). The impact of molecular weight of the polymers, composition (PS/PMMA ratio), and phase separation temperature on the morphologies is discussed. In addition, simulation results using Self-Consistent Field (SCF) theory are introduced to make fine-pitch TSV.

Original languageEnglish
Title of host publication2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509013999
DOIs
Publication statusPublished - 2017 Jul 5
Event2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States
Duration: 2016 Nov 82016 Nov 11

Publication series

Name2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Other

Other2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
CountryUnited States
CitySan Francisco
Period16/11/816/11/11

Keywords

  • 3D Integration Technology
  • Directed Self-Assembly (DSA)
  • Nano metal particles
  • Self-Consistent Field (SCF) theory
  • Through-Silicon Via (TSV)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications

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