New compact ECR plasma source for silicon nitride film formation in minimal fab system

Tetsuya Goto; Kei Ichiro Sato; Yuki Yabuta; Shigetoshi Sugawa; Shiro Hara

doi:10.1109/EDTM.2017.7947528

New compact ECR plasma source for silicon nitride film formation in minimal fab system

Tetsuya Goto, Kei Ichiro Sato, Yuki Yabuta, Shigetoshi Sugawa, Shiro Hara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	84-85
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947528
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	17/2/28 → 17/3/2

Keywords

Minimal fab system
Plasma damage
Silicon nitride

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947528

Cite this

Goto, T., Sato, K. I., Yabuta, Y., Sugawa, S., & Hara, S. (2017). New compact ECR plasma source for silicon nitride film formation in minimal fab system. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 84-85). [7947528] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947528

New compact ECR plasma source for silicon nitride film formation in minimal fab system. / Goto, Tetsuya; Sato, Kei Ichiro; Yabuta, Yuki et al.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 84-85 7947528 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goto, T, Sato, KI, Yabuta, Y, Sugawa, S & Hara, S 2017, New compact ECR plasma source for silicon nitride film formation in minimal fab system. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947528, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 84-85, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947528

Goto T, Sato KI, Yabuta Y, Sugawa S, Hara S. New compact ECR plasma source for silicon nitride film formation in minimal fab system. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 84-85. 7947528. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947528

Goto, Tetsuya ; Sato, Kei Ichiro ; Yabuta, Yuki et al. / New compact ECR plasma source for silicon nitride film formation in minimal fab system. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 84-85 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

@inproceedings{79989ff18b5b407b9cc18e5511bf3448,

title = "New compact ECR plasma source for silicon nitride film formation in minimal fab system",

abstract = "A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.",

keywords = "Minimal fab system, Plasma damage, Silicon nitride",

author = "Tetsuya Goto and Sato, {Kei Ichiro} and Yuki Yabuta and Shigetoshi Sugawa and Shiro Hara",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",

year = "2017",

month = jun,

day = "13",

doi = "10.1109/EDTM.2017.7947528",

language = "English",

series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "84--85",

booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

}

TY - GEN

T1 - New compact ECR plasma source for silicon nitride film formation in minimal fab system

AU - Goto, Tetsuya

AU - Sato, Kei Ichiro

AU - Yabuta, Yuki

AU - Sugawa, Shigetoshi

AU - Hara, Shiro

PY - 2017/6/13

Y1 - 2017/6/13

N2 - A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.

AB - A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.

KW - Minimal fab system

KW - Plasma damage

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=85021869762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021869762&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2017.7947528

DO - 10.1109/EDTM.2017.7947528

M3 - Conference contribution

AN - SCOPUS:85021869762

T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

SP - 84

EP - 85

BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017

Y2 - 28 February 2017 through 2 March 2017

ER -

New compact ECR plasma source for silicon nitride film formation in minimal fab system

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this