New compact ECR plasma source for silicon nitride film formation in minimal fab system

Tetsuya Goto, Kei Ichiro Sato, Yuki Yabuta, Shigetoshi Sugawa, Shiro Hara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages84-85
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/TerritoryJapan
CityToyama
Period17/2/2817/3/2

Keywords

  • Minimal fab system
  • Plasma damage
  • Silicon nitride

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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