@inproceedings{79989ff18b5b407b9cc18e5511bf3448,
title = "New compact ECR plasma source for silicon nitride film formation in minimal fab system",
abstract = "A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.",
keywords = "Minimal fab system, Plasma damage, Silicon nitride",
author = "Tetsuya Goto and Sato, {Kei Ichiro} and Yuki Yabuta and Shigetoshi Sugawa and Shiro Hara",
year = "2017",
month = jun,
day = "13",
doi = "10.1109/EDTM.2017.7947528",
language = "English",
series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "84--85",
booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
note = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",
}