New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

Sergey Pidin; Mitsumasa Koyanagi

doi:10.1143/jjap.37.1264

New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

Sergey Pidin, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

Original language	English
Pages (from-to)	1264-1270
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1264
Publication status	Published - 1998 Mar

Keywords

SOI MOSFET
Subthreshold current
Two-dimensional model

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.",

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author = "Sergey Pidin and Mitsumasa Koyanagi",

year = "1998",

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T1 - New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

AU - Pidin, Sergey

AU - Koyanagi, Mitsumasa

PY - 1998/3

Y1 - 1998/3

N2 - A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

AB - A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

KW - SOI MOSFET

KW - Subthreshold current

KW - Two-dimensional model

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SP - 1264

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 SUPPL. B

ER -

New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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