Abstract
A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 1264-1270 |
| Number of pages | 7 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 3 SUPPL. B |
| DOIs | |
| Publication status | Published - 1998 Mar |
Keywords
- SOI MOSFET
- Subthreshold current
- Two-dimensional model
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Pidin, S., & Koyanagi, M. (1998). New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(3 SUPPL. B), 1264-1270. https://doi.org/10.1143/jjap.37.1264