New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

Sergey Pidin, Mitsumasa Koyanagi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

Original languageEnglish
Pages (from-to)1264-1270
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
DOIs
Publication statusPublished - 1998 Mar

Keywords

  • SOI MOSFET
  • Subthreshold current
  • Two-dimensional model

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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