New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy

K. Tsutsui; M. Watanabe; Y. Nakagawa; T. Matsuda; T. Yoshida; E. Ikenaga; K. Kakushima; P. Ahmet; H. Nohira; T. Maruizumi; A. Ogura; T. Hattori; H. Iwai

doi:10.1109/ESSDERC.2008.4681719

New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy

K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, T. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.

Original language	English
Title of host publication	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	142-145
Number of pages	4
ISBN (Print)	9781424423644
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681719
Publication status	Published - 2008
Externally published	Yes
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom Duration: 2008 Sep 15 → 2008 Sep 19

Publication series

Name	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Country	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ESSDERC.2008.4681719

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Tsutsui, K., Watanabe, M., Nakagawa, Y., Matsuda, T., Yoshida, T., Ikenaga, E., Kakushima, K., Ahmet, P., Nohira, H., Maruizumi, T., Ogura, A., Hattori, T., & Iwai, H. (2008). New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 142-145). [4681719] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681719

New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. / Tsutsui, K.; Watanabe, M.; Nakagawa, Y.; Matsuda, T.; Yoshida, T.; Ikenaga, E.; Kakushima, K.; Ahmet, P.; Nohira, H.; Maruizumi, T.; Ogura, A.; Hattori, T.; Iwai, H.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 142-145 4681719 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsutsui, K, Watanabe, M, Nakagawa, Y, Matsuda, T, Yoshida, T, Ikenaga, E, Kakushima, K, Ahmet, P, Nohira, H, Maruizumi, T, Ogura, A, Hattori, T & Iwai, H 2008, New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681719, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 142-145, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681719

Tsutsui K, Watanabe M, Nakagawa Y, Matsuda T, Yoshida T, Ikenaga E et al. New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 142-145. 4681719. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2008.4681719

Tsutsui, K. ; Watanabe, M. ; Nakagawa, Y. ; Matsuda, T. ; Yoshida, T. ; Ikenaga, E. ; Kakushima, K. ; Ahmet, P. ; Nohira, H. ; Maruizumi, T. ; Ogura, A. ; Hattori, T. ; Iwai, H. / New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. pp. 142-145 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

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abstract = "Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.",

author = "K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and T. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai",

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AU - Tsutsui, K.

AU - Watanabe, M.

AU - Nakagawa, Y.

AU - Matsuda, T.

AU - Yoshida, T.

AU - Ikenaga, E.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Nohira, H.

AU - Maruizumi, T.

AU - Ogura, A.

AU - Hattori, T.

AU - Iwai, H.

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AB - Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.

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ER -

New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy

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