TY - GEN
T1 - New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy
AU - Tsutsui, K.
AU - Watanabe, M.
AU - Nakagawa, Y.
AU - Matsuda, T.
AU - Yoshida, T.
AU - Ikenaga, E.
AU - Kakushima, K.
AU - Ahmet, P.
AU - Nohira, H.
AU - Maruizumi, T.
AU - Ogura, A.
AU - Hattori, T.
AU - Iwai, H.
PY - 2008
Y1 - 2008
N2 - Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.
AB - Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.
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U2 - 10.1109/ESSDERC.2008.4681719
DO - 10.1109/ESSDERC.2008.4681719
M3 - Conference contribution
AN - SCOPUS:58049107829
SN - 9781424423644
T3 - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
SP - 142
EP - 145
BT - ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - ESSDERC 2008 - 38th European Solid-State Device Research Conference
Y2 - 15 September 2008 through 19 September 2008
ER -