New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy

K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, T. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Chemical bonding states of boron (B) in shallow P+/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages142-145
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Publication series

NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
CountryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Tsutsui, K., Watanabe, M., Nakagawa, Y., Matsuda, T., Yoshida, T., Ikenaga, E., Kakushima, K., Ahmet, P., Nohira, H., Maruizumi, T., Ogura, A., Hattori, T., & Iwai, H. (2008). New analysis of heavily doped boron and arsenic in shallow junctions by x-ray photoelectron spectroscopy. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 142-145). [4681719] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681719