Tantalum nitride (TaN) compact with a Vickers hardness of 26 GPa is prepared by a high-pressure and hightemperature (HPHT) method. The crystal structure and atom occupations of WC-type TaN have been investigated by neutron powder diffraction, and the compressibility of WC-type TaN has been investigated by using in-situ high-pressure synchrotron x-ray diffraction. The third-order BirchMurnaghan equation of state fitted to the x-ray diffraction pressure- volume (PV) sets of data, collected up to 41 GPa, yields ambient pressure isothermal bulk moduli of B0 = 369(2) GPa with pressure derivatives of B0 0 = 4 for the WC-type TaN. The bulk modulus of WC-type TaN is not in good agreement with the previous result (B0 = 351 GPa), which is close to the recent theoretical calculation result (B0 = 378 GPa). An analysis of the experiment results shows that crystal structure of WC-type TaN can be viewed as alternate stacking of Ta and N layers along the c direction, and the covalent TaN bonds between Ta and N layers along the c axis in the crystal structure play an important role in the incompressibility and hardness of WC-type TaN.
- high pressure
- neutron powder diffraction
- synchrotron x-ray diffraction
ASJC Scopus subject areas
- Physics and Astronomy(all)