Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device

Firman Mangasa Simanjuntak, Takeo Ohno, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The room-temperature oxidation process allows irradiation with neutral oxygen particles onto the resistive layer that leads to the absorption of oxygen by the surface of the ZnO layer. The irradiation is effective in controlling the defect concentrations; thus, the ON and OFF resistances of devices can be significantly increased. These characteristics promote the occurrence of resistive switching at much lower current compliance as well as induce switching behavior in very thin ZnO films with thicknesses of 14-42 nm. The thickness dependence of the transformation from filamentary to homogeneous switching was also studied using the neutral beam technique, and the underlying mechanism is discussed.

Original languageEnglish
Pages (from-to)18-24
Number of pages7
JournalACS Applied Electronic Materials
Volume1
Issue number1
DOIs
Publication statusPublished - 2019 Jan 22

Keywords

  • electrochemical metallization memory
  • memristor
  • neutral beam
  • resistive switching
  • surface oxidation
  • zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry

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