TY - CONF
T1 - Neutral beam technology for damage-free etching processes
AU - Samukawa, Seiji
N1 - Funding Information:
We would like to acknowledge the assistance given by Prof. Tetsuya Suemitsu of Tohoku university in relation to GaN HEMT, Prof. Ichiro Yamashita of Nara Institute of Science and Technology, Prof. Akihiro Murayama of Hokkaido University, Prof. Kohei Ito of Keio University and Prof. Akio Higo of Tohoku University, Advanced Institute of Material Research in relation to the quantum nano-disks. This study was partly commissioned by the Japan Science and Technology Agency (JST) and has received funding to promote the CREST Project and the Revitalization Program. Our thanks to everyone concerned.
Publisher Copyright:
© 2018 GaAs Mantech Incorporated. All Rights Reserved.
PY - 2018
Y1 - 2018
N2 - Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the author is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices. We are using this technique to develop future innovative nanodevices, such as high speed GaN HEMT and InGaN LED.
AB - Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the author is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices. We are using this technique to develop future innovative nanodevices, such as high speed GaN HEMT and InGaN LED.
KW - Defect-free
KW - GaN HEMT
KW - InGaN LED
KW - Neutral Beam Process
KW - Plasma Induced damages
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M3 - Paper
AN - SCOPUS:85050032638
T2 - 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
Y2 - 7 May 2018 through 10 May 2018
ER -