TY - GEN
T1 - Neutral beam technology-defect-free nanofabrication for novel nano-materials and nano-devices
AU - Samukawa, Seiji
PY - 2016
Y1 - 2016
N2 - Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.
AB - Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.
UR - http://www.scopus.com/inward/record.url?scp=85028634200&partnerID=8YFLogxK
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U2 - 10.1109/ICSICT.2016.7998907
DO - 10.1109/ICSICT.2016.7998907
M3 - Conference contribution
AN - SCOPUS:85028634200
T3 - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
SP - 314
EP - 316
BT - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
A2 - Huang, Ru
A2 - Tang, Ting-Ao
A2 - Jiang, Yu-Long
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Y2 - 25 October 2016 through 28 October 2016
ER -