Neutral beam technology-defect-free nanofabrication for novel nano-materials and nano-devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages134-135
Number of pages2
ISBN (Electronic)9781509007264
DOIs
Publication statusPublished - 2016 Sep 27
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 2016 Jun 122016 Jun 13

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Other

Other21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/TerritoryUnited States
CityHonolulu
Period16/6/1216/6/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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