Neutral beam technology - Defect-free nanofabrication for novel nano-materials and nano-devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the fabrication of semiconductor devices, reactive plasmas are widely used in key processes such as microfabrication, surface reforming and film deposition, and there are now demands for processing precision at the atomic layer level, and for deposition accuracy that allows the control of structures at the molecular level. However, in ultra-miniature nanoscale devices that will become the mainstream in the future, the use of plasma processes can cause serious problems such as abnormal etching and damage to insulation films by the accumulation of ions or electrons emitter from the plasma as shown in Fig. 1, or the formation of surface defects of over 10 nm in size by exposure to vacuum ultraviolet or other emissions.1-4) In particular, since nanodevices have a large surface area compared with the bulk material, plasma processes can have a large effect on the electrical and chemical properties of devices due to process-induced defects caused by ultraviolet exposure, which has not caused a problem in conventional processes. Furthermore, since future nanodevices will require dimensional control of three-dimensional structures at the atomic layer level, it will be absolutely essential to control surface chemical reactions with high precision and selectivity at the atomic layer level. Neutral beam process technology (developed by S. Samukawa) has attracted attention as a way of solving these issues.5-8) The neutral beam suppresses the incidence of charged particles and electromagnetic radiation onto the substrate, and is able to expose the substrate only to neutral particles with high kinetic energy, resulting in ultra-precise nanoprocessing that can suppress the formation of defects at the atomic layer level and control surface chemical reactions with high precision. This paper introduces the neutron beam generation technique developed by S. Samukawa, and discusses its application to nanoprocessing and nanodevices that have recently been vigorously pursued.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
Publication statusPublished - 2015 Jun 3
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China
Duration: 2015 Apr 272015 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Other

Other2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period15/4/2715/4/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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