Neutral beam oxidation for oxide-based nanodevice

T. Ohno, D. Nakayama, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we show a low temperature neutral beam oxidation process to obtain a high quality metallic oxide film. After irradiation of a Ta metal film with a neutral oxygen beam, a nm-thick Ta2O5 film with a high film density was obtained, and a fabricated Cu/Ta2O5/Pt resistive memory (ReRAM) structure showed a bipolar resistive switching characteristic. In addition, after the deposition of a 1-nm-thick Al film on a Ge substrate, the simultaneous oxidation of Al and Ge was carried out at 300 °C, and a fabricated Au/AlOx/GeOx/Ge/Al MOS gate structure showed a C-V characteristic. These results demonstrate the great potential of neutral beam oxidation for the development oxide-based nanodevices.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages171-173
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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