TY - JOUR
T1 - Networked Power-Gated MRAMs for Memory-Based Computing
AU - Diguet, Jean Philippe
AU - Onizawa, Naoya
AU - Rizk, Mostafa
AU - Sepulveda, Johanna
AU - Baghdadi, Amer
AU - Hanyu, Takahiro
N1 - Funding Information:
Manuscript received September 2, 2017; revised February 9, 2018 and May 4, 2018; accepted June 26, 2018. Date of publication August 7, 2018; date of current version November 30, 2018. This work was supported in part by JSPS KAKENHI, Japan, under Grant JP16H06300, in part by the Region Bretagne CyAM Project, France, and in part by the MFC Project of Future and Rupture IMT Program, France. (Corresponding author: Jean-Philippe Diguet.) J.-P. Diguet is with CNRS, Lab-STICC, 56100 Lorient, France (e-mail: jean-philippe.diguet@univ-ubs.fr).
Publisher Copyright:
© 1993-2012 IEEE.
PY - 2018/12
Y1 - 2018/12
N2 - Emerging nonvolatile memory technologies open new perspectives for original computing architectures. In this paper, we propose a new type of flexible and energy-efficient architecture that relies on power-gated distributed magnetoresistive random access memory (MRAM). The proposed architecture uses a network-on-chip (NoC) to interconnect MRAM-based clusters, processing elements, and managers. The NoC distributes application-specific commands to MRAM devices by means of packets. Configurable network interfaces allow to transform MRAM devices into smart units able to respond to incoming commands. In this context, three types of MRAM designs are proposed with different power-gating policies and granularities. A relevant database search engine case study is considered to illustrate the benefits of this proposed architecture. It is implemented with a sparse-neural-network approach and simulated in SystemC with different scenarios including hundreds of database queries. Hardware designs and accurate power estimations have been conducted. The obtained results demonstrate important power reduction with database hit rates of about 94%. Targeting 65-nm technology, energy savings reach 87% when compared with an static random access memory-based implementation. Moreover, a new asymmetric read/write MRAM type provides from 39% to 50% energy reduction with respect to the other fixed-granularity models. This results in a low-power, highly scalable, and configurable implementation of memory-based computing.
AB - Emerging nonvolatile memory technologies open new perspectives for original computing architectures. In this paper, we propose a new type of flexible and energy-efficient architecture that relies on power-gated distributed magnetoresistive random access memory (MRAM). The proposed architecture uses a network-on-chip (NoC) to interconnect MRAM-based clusters, processing elements, and managers. The NoC distributes application-specific commands to MRAM devices by means of packets. Configurable network interfaces allow to transform MRAM devices into smart units able to respond to incoming commands. In this context, three types of MRAM designs are proposed with different power-gating policies and granularities. A relevant database search engine case study is considered to illustrate the benefits of this proposed architecture. It is implemented with a sparse-neural-network approach and simulated in SystemC with different scenarios including hundreds of database queries. Hardware designs and accurate power estimations have been conducted. The obtained results demonstrate important power reduction with database hit rates of about 94%. Targeting 65-nm technology, energy savings reach 87% when compared with an static random access memory-based implementation. Moreover, a new asymmetric read/write MRAM type provides from 39% to 50% energy reduction with respect to the other fixed-granularity models. This results in a low-power, highly scalable, and configurable implementation of memory-based computing.
KW - Database
KW - magnetoresistive random access memory (MRAM)
KW - network-on-chip (NoC)
KW - power gating (PG)
KW - sparse neural networks (SNNs)
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U2 - 10.1109/TVLSI.2018.2856458
DO - 10.1109/TVLSI.2018.2856458
M3 - Article
AN - SCOPUS:85051412717
SN - 1063-8210
VL - 26
SP - 2696
EP - 2708
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 12
M1 - 8428653
ER -