Negatively charged excitons in a back-gated undoped heterostructure

S. Nomura, M. Yamaguchi, D. Sato, T. Akazaki, H. Tamura, H. Takayanagi, T. Saku, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The observation of negatively charged excitons in a back-gated undoped GaAs/AlGaAs quantum well is reported in magnetic fields depending on the electron density between 1 × 109 - 2 × 1011 cm-2. We find that a peak appears 0.3 meV below the singlet charged exciton state at 5 T, which develops to the lowest Landau-level with increase in the electron density.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1162-1163
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

Fingerprint Dive into the research topics of 'Negatively charged excitons in a back-gated undoped heterostructure'. Together they form a unique fingerprint.

Cite this