Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

K. Takashina; Y. Niida; V. T. Renard; A. Fujiwara; T. Fujisawa; Y. Hirayama

Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, Y. Hirayama

SCI - Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

Original language	English
Pages (from-to)	2938-2942
Number of pages	5
Journal	International Journal of Modern Physics B
Volume	23
Issue number	12-13
Publication status	Published - 2009 May 20

Keywords

Metal-insulator transition
Subbands
Valley-splitting

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Condensed Matter Physics

Cite this

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title = "Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands",

abstract = "We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.",

keywords = "Metal-insulator transition, Subbands, Valley-splitting",

author = "K. Takashina and Y. Niida and Renard, {V. T.} and A. Fujiwara and T. Fujisawa and Y. Hirayama",

year = "2009",

month = may,

day = "20",

language = "English",

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pages = "2938--2942",

journal = "International Journal of Modern Physics B",

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TY - JOUR

T1 - Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

AU - Takashina, K.

AU - Niida, Y.

AU - Renard, V. T.

AU - Fujiwara, A.

AU - Fujisawa, T.

AU - Hirayama, Y.

PY - 2009/5/20

Y1 - 2009/5/20

N2 - We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

AB - We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

KW - Metal-insulator transition

KW - Subbands

KW - Valley-splitting

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UR - http://www.scopus.com/inward/citedby.url?scp=68149131981&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:68149131981

VL - 23

SP - 2938

EP - 2942

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

SN - 0217-9792

IS - 12-13

ER -

Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

Abstract

Keywords

ASJC Scopus subject areas

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