Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands

K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

Abstract

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

Original languageEnglish
Pages (from-to)2938-2942
Number of pages5
JournalInternational Journal of Modern Physics B
Volume23
Issue number12-13
Publication statusPublished - 2009 May 20

Keywords

  • Metal-insulator transition
  • Subbands
  • Valley-splitting

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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