Abstract
We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
Original language | English |
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Pages (from-to) | 2938-2942 |
Number of pages | 5 |
Journal | International Journal of Modern Physics B |
Volume | 23 |
Issue number | 12-13 |
Publication status | Published - 2009 May 20 |
Keywords
- Metal-insulator transition
- Subbands
- Valley-splitting
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics