TY - JOUR
T1 - Negative Differential Resistance Transistor with Organic p-n Heterojunction
AU - Kobashi, Kazuyoshi
AU - Hayakawa, Ryoma
AU - Chikyow, Toyohiro
AU - Wakayama, Yutaka
N1 - Funding Information:
This work was supported by the World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, JSPS KAKENHI Grant Nos. JP23686051, JP24350096, JP15K13819, and JP23111722. T.C. and Y.W. conceived and designed this project. K.K. performed experiments, including device preparation and electrical measurements. K.K., R.H., and Y.W. contributed analyses of experimental data and co-writing the manuscript.
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/8
Y1 - 2017/8
N2 - Negative differential resistance (NDR) has large potential for versatile device applications, including high-frequency oscillators, memories, fast switches, and multilevel logic circuits. NDRs are observed at heteromaterial interfaces in resonant tunneling diodes or Esaki diodes consisting of compound semiconductors or two-dimensional (2D) atomic thin films. However, these devices suffer from poor peak-to-valley ratios (PVR) at room temperature; a cryogenic temperature is needed to improve the PVR. These negative factors are obstacles to practical applications. Here, a new NDR transistor is proposed, in which a p-n heterojunction of organic semiconductors plays a key role. Well-balanced carrier transport is manipulated at the organic p-n junction to realize outstanding NDR. Experimental and simulation analyses reveal that the observed NDR can be explained by analogy with the shoot-through current mechanism in complementary metal-oxide- semiconductor (CMOS) devices. As a result, the NDR transistor shows large PVRs of up to about 104 even at room temperature.
AB - Negative differential resistance (NDR) has large potential for versatile device applications, including high-frequency oscillators, memories, fast switches, and multilevel logic circuits. NDRs are observed at heteromaterial interfaces in resonant tunneling diodes or Esaki diodes consisting of compound semiconductors or two-dimensional (2D) atomic thin films. However, these devices suffer from poor peak-to-valley ratios (PVR) at room temperature; a cryogenic temperature is needed to improve the PVR. These negative factors are obstacles to practical applications. Here, a new NDR transistor is proposed, in which a p-n heterojunction of organic semiconductors plays a key role. Well-balanced carrier transport is manipulated at the organic p-n junction to realize outstanding NDR. Experimental and simulation analyses reveal that the observed NDR can be explained by analogy with the shoot-through current mechanism in complementary metal-oxide- semiconductor (CMOS) devices. As a result, the NDR transistor shows large PVRs of up to about 104 even at room temperature.
KW - molecular heterojunctions
KW - negative differential resistance
KW - organic thin film transistors
KW - shoot-through current
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U2 - 10.1002/aelm.201700106
DO - 10.1002/aelm.201700106
M3 - Article
AN - SCOPUS:85021150174
VL - 3
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 8
M1 - 1700106
ER -