Negative anisotropic magnetoresistance in γ'-Fe 4N epitaxial films on SrTiO 3(001) grown by molecular beam epitaxy

Keita Ito, Kazuki Kabara, Hirokazu Takahashi, Tatsunori Sanai, Kaoru Toko, Takashi Suemasu, Masakiyo Tsunoda

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27 Citations (Scopus)


We observed the negative anisotropic magnetoresistance (AMR) effect in γ'-Fe 4N epitaxial films grown on SrTiO 3(001) substrates using molecular beam epitaxy. The AMR ratio was increased immediately below 50 K. The angular dependence of AMR ratio contained not only cos 2θ but also cos 4θ components, and the sign of Fourier coefficient of cos 4θ term was changed around 10 K. These behaviors are in good agreement with those already reported for γ'-Fe 4N pseudo-single-crystal films on MgO(001) substrates formed by sputtering. These behaviors might be attributed to temperature dependence of electronic or magnetic structure specific to γ'-Fe 4N.

Original languageEnglish
Article number068001
JournalJapanese journal of applied physics
Issue number6 PART 1
Publication statusPublished - 2012 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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