Necessary thickness of au capping layers for room temperature bonding of wafers in air using thin metal films with au capping layers

M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This study elucidated room temperature bonding of wafers in air using Ag, Al, and Cu films with thin Au capping layers. To avoid oxidation of 20-nm-thick of Ag and Cu films, a 2-nm-thick Au layer was found to be effective. Bonding was achieved in air over the entire area without a loading pressure. However, the necessary thickness of the Au capping layer for 20-nm-thick Al films was 6 nm or more, which is three times thicker than those for Ag and Cu films. The necessary Au layer thickness increased as the thicknesses of Al and Ag layers increased. Moreover, a loading pressure was necessary for bonding using thick films. These results were attributed to increased the surface roughness. However, the necessary Au capping layer thickness for bonding was 1/10 or less of the thickness of Al or Ag layers in the present thickness range of 20-500 nm.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding
Subtitle of host publicationScience, Technology and Applications 14
EditorsR. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky
PublisherElectrochemical Society Inc.
Pages67-76
Number of pages10
Edition9
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number9
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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