Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm2 (pulse) and 8 kA/cm2 (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.

Original languageEnglish
Pages (from-to)L911-L913
JournalJapanese journal of applied physics
Volume24
Issue number12
DOIs
Publication statusPublished - 1985 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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