NBTI mechanism based on hole-injection for accurate lifetime prediction

Akinobu Teramoto, Rihito Kuroda, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The evaluation method of Negative Bias Temperature Instability (NBTI) based on hole-injection is proposed for accurate lifetime prediction of MOS devices. The acceleration parameters are most important for accurate lifetime prediction. Proposed acceleration parameter is not the applied voltage to the gate insulator film and the temperature but the injected hole injection quantity to the gate insulator film. The degradation mechanism in the excessive voltage and excessive temperature stresses are different from that in the operation conditions. In the relatively high hole-injection stress, the mechanism is also different from that in the operation conditions. It is considered that the difference is caused by the excess enhancement of the hole energy in the inversion layer. In the relatively low hole-injection stress, the degradation mechanism becomes the same as that in the operation conditions. The accurate lifetime prediction in MOSFET level and circuit level can be realized by hole-injection acceleration method.

Original languageEnglish
Title of host publicationECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
Pages229-243
Number of pages15
Edition3
DOIs
Publication statusPublished - 2007 Dec 1
EventSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 11

Publication series

NameECS Transactions
Number3
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • Engineering(all)

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