Nb2O5 deposition on aluminum from NbCl 5-used sol and anodizing of Nb2O5-coated Al

Shun Koyama; Tatsuya Kikuchi; Masatoshi Sakairi; Hideaki Takahashi; Shinji Nagata

doi:10.5796/electrochemistry.75.573

Nb₂O₅ deposition on aluminum from NbCl ₅-used sol and anodizing of Nb₂O₅-coated Al

Shun Koyama, Tatsuya Kikuchi, Masatoshi Sakairi, Hideaki Takahashi, Shinji Nagata

Materials Design Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Formation of Nb₂O₅ films on aluminum was attempted by sol-gel coating, using NbCl₅ as a precursor. The structure and the dielectric properties of anodic oxide films formed on aluminum by sol-gel coating and the subsequent anodizing were examined. Anodic oxide film formed by this process was composed of an inner Al₂O₃ layer and an outer Nb₂O₅ layer. The capacitance of the anodic oxide films formed on Nb₂O₅-coated specimens was at most 34 % higher than that of anodic oxide films on aluminum without coating.

Original language	English
Pages (from-to)	573-575
Number of pages	3
Journal	Electrochemistry
Volume	75
Issue number	8
DOIs	https://doi.org/10.5796/electrochemistry.75.573
Publication status	Published - 2007 Aug

Keywords

Aluminum electrolytic capacitor
Anodizing
Sol-Gel coating

ASJC Scopus subject areas

Electrochemistry

Access to Document

10.5796/electrochemistry.75.573

Cite this

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title = "Nb2O5 deposition on aluminum from NbCl 5-used sol and anodizing of Nb2O5-coated Al",

abstract = "Formation of Nb2O5 films on aluminum was attempted by sol-gel coating, using NbCl5 as a precursor. The structure and the dielectric properties of anodic oxide films formed on aluminum by sol-gel coating and the subsequent anodizing were examined. Anodic oxide film formed by this process was composed of an inner Al2O3 layer and an outer Nb2O5 layer. The capacitance of the anodic oxide films formed on Nb2O5-coated specimens was at most 34 % higher than that of anodic oxide films on aluminum without coating.",

keywords = "Aluminum electrolytic capacitor, Anodizing, Sol-Gel coating",

author = "Shun Koyama and Tatsuya Kikuchi and Masatoshi Sakairi and Hideaki Takahashi and Shinji Nagata",

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T1 - Nb2O5 deposition on aluminum from NbCl 5-used sol and anodizing of Nb2O5-coated Al

AU - Koyama, Shun

AU - Kikuchi, Tatsuya

AU - Sakairi, Masatoshi

AU - Takahashi, Hideaki

AU - Nagata, Shinji

PY - 2007/8

Y1 - 2007/8

N2 - Formation of Nb2O5 films on aluminum was attempted by sol-gel coating, using NbCl5 as a precursor. The structure and the dielectric properties of anodic oxide films formed on aluminum by sol-gel coating and the subsequent anodizing were examined. Anodic oxide film formed by this process was composed of an inner Al2O3 layer and an outer Nb2O5 layer. The capacitance of the anodic oxide films formed on Nb2O5-coated specimens was at most 34 % higher than that of anodic oxide films on aluminum without coating.

AB - Formation of Nb2O5 films on aluminum was attempted by sol-gel coating, using NbCl5 as a precursor. The structure and the dielectric properties of anodic oxide films formed on aluminum by sol-gel coating and the subsequent anodizing were examined. Anodic oxide film formed by this process was composed of an inner Al2O3 layer and an outer Nb2O5 layer. The capacitance of the anodic oxide films formed on Nb2O5-coated specimens was at most 34 % higher than that of anodic oxide films on aluminum without coating.

KW - Aluminum electrolytic capacitor

KW - Anodizing

KW - Sol-Gel coating

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