TY - JOUR
T1 - Nature of carrier doping in T¤-La1.8−xEu0.2SrxCuO4 studied by X-ray photoemission and absorption spectroscopy
AU - Lin, Chun
AU - Horio, Masafumi
AU - Kawamata, Takayuki
AU - Saito, Shin
AU - Koshiishi, Keisuke
AU - Sakamoto, Shoya
AU - Zhang, Yujun
AU - Yamamoto, Kohei
AU - Ikeda, Keisuke
AU - Hirata, Yasuyuki
AU - Takubo, Kou
AU - Wadati, Hiroki
AU - Yasui, Akira
AU - Takagi, Yasumasa
AU - Ikenaga, Eiji
AU - Adachi, Tadashi
AU - Koike, Yoji
AU - Fujimori, Atsushi
N1 - Funding Information:
Acknowledgment HAXPES and XAS experiments were performed at SPring-8 (Proposals Nos. 2016A1210 and 2018A1073). This work was supported by KAKENHI Grants (Nos. 14J09200, 15H02109, 17H02915, and 19K03741) from JSPS. Author contributions C.L. and M.H. contribute equally to the paper.
Funding Information:
HAXPES and XAS experiments were performed at SPring-8 (Proposals Nos. 2016A1210 and 2018A1073). This work was supported by KAKENHI Grants (Nos. 14J09200, 15H02109, 17H02915, and 19K03741) from JSPS.
Publisher Copyright:
© 2019 The Physical Society of Japan
PY - 2019
Y1 - 2019
N2 - Recently, hole-doped superconducting cuprates with the TA-structure La1.8−xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced TA-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
AB - Recently, hole-doped superconducting cuprates with the TA-structure La1.8−xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced TA-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
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U2 - 10.7566/JPSJ.88.115004
DO - 10.7566/JPSJ.88.115004
M3 - Article
AN - SCOPUS:85074772896
SN - 0031-9015
VL - 88
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
IS - 11
M1 - 11500
ER -