The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n+-Si surfaces (1020 cm-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n--Si (1015 cm-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n--Si in hydrogenperoxide (H2O2) solution or in H2O2 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.
|Number of pages||4|
|Publication status||Published - 1990 Dec 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas