Native oxide growth on silicon surface in wet ambient

Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa, Akinobu Teramoto

Research output: Contribution to conferencePaperpeer-review

9 Citations (Scopus)

Abstract

The effects of dopant concentration for n-type dopant (P, As) in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P) and arsenic (As) doped n+-Si surfaces (1020 cm-3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field assisted mechanism. In contrast, oxide thickness on n--Si (1015 cm-3) continuously increases with time following a parabolic law. Oxide thickness saturation is also found on n--Si in hydrogenperoxide (H2O2) solution or in H2O2 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with temperature.

Original languageEnglish
Pages1063-1066
Number of pages4
Publication statusPublished - 1990 Dec 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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