Native oxide growth on silicon surface in ultrapure water and hydrogen peroxide

Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa, Akinobu Teramoto

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31 Citations (Scopus)


The effects of n-type dopant (P, As) concentration in silicon (100), temperature, and oxidizing species on native oxide growth in liquid water are described. The oxide growth on phosphorus (P)- and arsenic (As)-doped n +-Si surfaces (1020 cm -3) in ultrapure water exhibits saturation of oxide thickness, suggesting a field-assisted mechanism. Oxide thickness saturation was also found on n-Si in hydrogen peroxide (H202) solution or in H202 solution in the presence of a platinum (Pt) mesh that creates oxidizing radicals or ions. The oxide growth rate in ultrapure water increases with an increase of temperature.

Original languageEnglish
Pages (from-to)2392-2394
Number of pages3
JournalJapanese journal of applied physics
Issue number12
Publication statusPublished - 1990 Dec
Externally publishedYes


  • Native oxide growth
  • Oxide thickness
  • Silicon surface
  • Ultrapure water
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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