TY - GEN
T1 - Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes
AU - Tamura, Yosuke
AU - Higo, Akio
AU - Kiba, Takayuki
AU - Thomas, Cedric
AU - Yunpeng, Wang
AU - Sodabanlu, Hassanet
AU - Yamashita, Ichiro
AU - Sugiyama, Masakazu
AU - Nakano, Yoshiaki
AU - Murayama, Akihiro
AU - Samukawa, Seiji
PY - 2014/11/26
Y1 - 2014/11/26
N2 - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.
AB - Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.
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U2 - 10.1109/NANO.2014.6967977
DO - 10.1109/NANO.2014.6967977
M3 - Conference contribution
AN - SCOPUS:84919474985
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 221
EP - 224
BT - Proceedings of the IEEE Conference on Nanotechnology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Y2 - 18 August 2014 through 21 August 2014
ER -