Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

Jian Yong Hu; Masahiro Nakano; Itaru Osaka; Kazuo Takimiya

doi:10.1039/c5tc00486a

Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

Jian Yong Hu, Masahiro Nakano, Itaru Osaka, Kazuo Takimiya

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm² V^-1 s^-1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.

Original language	English
Pages (from-to)	4244-4249
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	17
DOIs	https://doi.org/10.1039/c5tc00486a
Publication status	Published - 2015 May 7
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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abstract = "Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V-1 s-1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.",

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AU - Osaka, Itaru

AU - Takimiya, Kazuo

N1 - Publisher Copyright: © The Royal Society of Chemistry 2015.

PY - 2015/5/7

Y1 - 2015/5/7

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AB - Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V-1 s-1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.

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Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

Abstract

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