Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Yuji Masubuchi; Ryohei Yamaoka; Tetsuya Tohei; Teruyasu Mizoguchi; Yuichi Ikuhara; Shinichi Kikkawa

doi:10.1016/j.jeurceramsoc.2011.10.038

Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Yuji Masubuchi, Ryohei Yamaoka, Tetsuya Tohei, Teruyasu Mizoguchi, Yuichi Ikuhara, Shinichi Kikkawa

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50. mL/min.

Original language	English
Pages (from-to)	1989-1993
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	32
Issue number	9
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2011.10.038
Publication status	Published - 2012 Jul

Keywords

Defects
Electron microscopy
Fibres
Oxynitrides

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1016/j.jeurceramsoc.2011.10.038

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Nanowire of hexagonal gallium oxynitride : Direct observation of its stacking disorder and its long nanowire growth. / Masubuchi, Yuji; Yamaoka, Ryohei; Tohei, Tetsuya; Mizoguchi, Teruyasu; Ikuhara, Yuichi; Kikkawa, Shinichi.

In: Journal of the European Ceramic Society, Vol. 32, No. 9, 07.2012, p. 1989-1993.

Research output: Contribution to journal › Article › peer-review

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abstract = "The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50. mL/min.",

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AU - Yamaoka, Ryohei

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AU - Ikuhara, Yuichi

AU - Kikkawa, Shinichi

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N2 - The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50. mL/min.

AB - The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50. mL/min.

KW - Defects

KW - Electron microscopy

KW - Fibres

KW - Oxynitrides

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Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Abstract

Keywords

ASJC Scopus subject areas

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