Nanowire formation and selective adhesion on substrates by single-ion track reaction in polysilanes

Shu Seki, Satoshi Tsukuda, Yoichi Yoshida, Takahiro Kozawa, Seiichi Tagawa, Masaki Sugimoto, Shigeru Tanaka

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

High-density energy deposition using ion beams causes the nonhomogeneous cross-linking reaction of polysilane derivatives within a nano-sized cylindrical area along an ion trajectory, and yields β-SiC-based nanowires whose sizes (length and thickness) and number densities are completely controlled by changing the energy, particle, and fluence of incident ions, and/or molecular sizes of target polymers. Recently, the techniques of position-selective single ion hitting have been developed for MeV order ion beams. However, it is difficult to precisely control the positions of nanowires on substrates. In the present study, we report the selective adhesion of nanowires on Si substrates by surface treatment before polymer coating, which enables the patterning of the planted nanowires on substrates and/or electrodes as candidate, nano-sized field emissive cathodes or electroluminescent devices.

Original languageEnglish
Pages (from-to)4159-4161
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 B
DOIs
Publication statusPublished - 2003 Jun
Externally publishedYes

Keywords

  • Ion beam
  • Nanowire
  • Polysilane
  • Quantum wire
  • Track

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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