TY - JOUR
T1 - Nanowire design by dislocation technology
AU - Ikuhara, Yuichi
N1 - Funding Information:
The author would like to acknowledge the collaboration with N. Shibata, T. Mizoguchi, K. Matsunaga, T. Yamamoto throughout the present studies, and with A. Nakamura, H. Nishimura, T. Nakagawa, J. Thoma, M. Tamura, E. Uehara, E. Tochigi, K.P.D. Lagerlof, M.F. Chisholm, S.J. Pennycook for sapphire studies, and with A. Kuwabara, S. Ii, K. Otsuka for YSZ studies. The author also thanks T. Sakuma, R.M. Cannon, A.M. Glaeser, P. Pirouz, A.H. Heuer, P.B. Hirsch for valuable discussions and comments. A part of this work was supported by the Grants-in-Aid for Scientific Research on Priority Areas “Nano Materials Science for Atomic-scale Modification” (No. 19053001) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
PY - 2009/8
Y1 - 2009/8
N2 - We proposed new guidelines for designing ceramic devices with a high-density of nanowires or periodically aligned nanowires in single crystals by controlling dislocation distribution, type and composition. Insulating sapphire and YSZ single crystal were used as model systems in which high-densities of dislocations and periodically aligned dislocations were introduced by high-temperature compression tests and fabrication of bicrystals with low-angle grain boundaries. The electron and ion conductivities were measured for the dislocation introduced crystals, and it was concluded that the proposed techniques are very useful for giving new functions to any single crystal.
AB - We proposed new guidelines for designing ceramic devices with a high-density of nanowires or periodically aligned nanowires in single crystals by controlling dislocation distribution, type and composition. Insulating sapphire and YSZ single crystal were used as model systems in which high-densities of dislocations and periodically aligned dislocations were introduced by high-temperature compression tests and fabrication of bicrystals with low-angle grain boundaries. The electron and ion conductivities were measured for the dislocation introduced crystals, and it was concluded that the proposed techniques are very useful for giving new functions to any single crystal.
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U2 - 10.1016/j.pmatsci.2009.03.001
DO - 10.1016/j.pmatsci.2009.03.001
M3 - Article
AN - SCOPUS:67349119463
VL - 54
SP - 770
EP - 791
JO - Progress in Materials Science
JF - Progress in Materials Science
SN - 0079-6425
IS - 6
ER -