The electronic transport through bent single-wall carbon nanotubes is studied. Using a four-orbital per atom tight-binding model, the relaxed configurations of a (10, 0) semiconducting nanotube at different bending angles are first obtained. The optimized structures are then used in calculating conductance and current-voltage characteristics of the systems. These results are used to establish a correspondence between the mechanical deformation and transport properties, with potential applications in, e.g., nanoswitches. The source of the switching behavior is explained in terms of the localized states within the bent region.
- Carbon nanotube
- Electromechanical sensor
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Computer Science Applications
- Electrical and Electronic Engineering