Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages116-118
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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