Nanostructure for fast bend transition in liquid crystal π-cells by nanoimprint technology

H. Kikuchi, K. Machida, H. Sato, T. Murashige, H. Fujikake, F. Sato

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

A novel geometric structure for achieving a fast and uniform splay-to-bend transition in a liquid crystal (LC) π-cell is proposed. In order to obtain the fast and uniform bend transition, we formed a nanostructure in π-cell fabricated by applying room-temperature nanoimprint lithography (NIL) process. This novel LC device has quick, stable transition from splay-to-bend orientation under low-driving voltage. This NIL process can be applicable to the fabrication of display panel to achieve a uniform bend pixel distribution and a fast bend transition.

Original languageEnglish
Pages1977-1980
Number of pages4
Publication statusPublished - 2005
Externally publishedYes
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: 2005 Dec 62005 Dec 9

Other

OtherIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/TerritoryJapan
CityTakamatsu
Period05/12/605/12/9

ASJC Scopus subject areas

  • Engineering(all)

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