Nanostructure fabrication through a microwire of local anodization

Takahiro Fukumoto, Yasuo Kimura, Masataka Moriya, Yoshinao Mizugaki, Toshiro Ogino, Daisuke Tadaki, Ma Teng, Ayumi Hirano-Iwata, Michio Niwano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An aluminum microwire was locally anodized to form a nanowire with triangular cross section. Nanostructure formed through local anodization depended strongly on a cross sectional shape of a microwire before anodization. The width of the nanowire was controlled by the ratio of voltage between edges of locally anodized area to anodization current. This indicates that local anodization has the potential to fabricate of nanostructures for nanodevices.

Original languageEnglish
Title of host publicationIMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages60-61
Number of pages2
ISBN (Electronic)9781509039913
DOIs
Publication statusPublished - 2017 Jul 31
Event15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017 - Kyoto, Japan
Duration: 2017 Jun 292017 Jun 30

Publication series

NameIMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai

Other

Other15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017
CountryJapan
CityKyoto
Period17/6/2917/6/30

Keywords

  • anodization
  • nanostructure
  • porous alumina
  • self organization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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  • Cite this

    Fukumoto, T., Kimura, Y., Moriya, M., Mizugaki, Y., Ogino, T., Tadaki, D., Teng, M., Hirano-Iwata, A., & Niwano, M. (2017). Nanostructure fabrication through a microwire of local anodization. In IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai (pp. 60-61). [7998042] (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2017.7998042