Nanostructure design for control of phonon and electron transports

Yoshiaki Nakamura, Kentaro Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Simultaneous achievement of low thermal conductivity κ and high electrical conductivity cris a promising route for realizing Si-based thermoelectric materials. Although several attempts have been made, this requirement has still been bottlenecked by their correlated nature. In order to realize low κ and high σ simultaneously, we have proposed a nanoarchitecture that is Si films including epitaxial Ge nanodots. This nanoarchitecture was fabricated based on molecular beam epitaxy, where Ge nanodots and Si layer were stacked alternately on Si substrates using unique ultrathin SiO2 film technique. In this study, we investigated the impact of Ge nanodot incorporation and doping on the κ and σ. The κ was significantly reduced by Ge nanodot incorporation whereas the σ exhibited high value coming from Si property. This demonstrated the accomplishment of the nanostructure design for the independent control of carrier and phonon transport using the ultrasmall epitaxial Ge nanodots.

Original languageEnglish
Title of host publicationECS Transactions
EditorsDurga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
PublisherElectrochemical Society Inc.
Pages93-100
Number of pages8
Edition1
ISBN (Print)9781623324704
DOIs
Publication statusPublished - 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: 2017 Oct 12017 Oct 5

Publication series

NameECS Transactions
Number1
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period17/10/117/10/5

ASJC Scopus subject areas

  • Engineering(all)

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