Nanostructure and strain field in vertically aligned nano-islands for Si/Ge 2D photonic nanocrystals

Takanori Kiguchi, Yusuke Hoshi, Takeshi Tayagaki, Noritaka Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


The local strain field and the intermixing of a Ge nano-islands (NIs)/Si spacer stacked structure in a novel solar cell with a p-i-n type Si single crystal with two-dimensional photonic nanocrystals connecting to the vertically aligned NIs were analyzed using electron microscopy. High-angle annular dark field-scanning transmission electron microscope (HAADF-STEM) images show intermixing between Ge and Si clearly and reveal that the surface segregation of Ge becomes advanced. The average composition of the NIs is Ge 0.42Si0.58, which is almost constant in a row of vertically aligned NIs. The local strain analysis results obtained from the high-resolution transmission electron microscope (HRTEM) images show that the strain state is partially relaxed after the elastic relaxation of NIs.

Original languageEnglish
Title of host publicationGroup IV Semiconductor Nanostructures and Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781632661036
Publication statusPublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: 2012 Nov 252012 Nov 30

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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