Abstract
The domain switching characteristics of a congruent LiTaO3 (CLT) single crystal are investigated mainly with respect to switching speed. It is found that fast nanosecond domain switching can be achieved by reducing the sample thickness, even for CLT, which has been thought to be unsuitable for high-speed switching. As an example, the authors successfully obtain a polarization inverted domain dot with a radius of 7.9 nm in a 60-nm-thick CLT plate by application of a 4ns, 10 V pulse. These results demonstrate that the speed of polarization reversal is closely related to the thickness of the medium.
Original language | English |
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Pages (from-to) | 2818-2821 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 5 B |
DOIs | |
Publication status | Published - 2004 May |
Keywords
- Backswitching
- Data storage
- Ferroelectrics
- Lithium tantalate
- Scanning nonlinear dielectric microscopy
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)